Magnachip to Expand Its Industrial IGBT Business Based on Advanced Traction Inverter IGBT Technology Jointly Developed in Strategic Partnership with Hyundai Mobis - Magnachip to leverage accumulated ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN ...

Although they require more complex circuits, three-level inverters are more efficient than their two-level cousins. Effective partitioning simplifies implementation of the three-level configuration.

Renesas Electronics Corp. has announced the development of a new series of silicon (Si) insulated gate bipolar transistors (IGBTs) with low power losses in a small footprint. Targeting next-generation ...

Given the many varieties of advanced power devices available, choosing the right power device for an application can be a daunting task. For solar inverter applications, it is well known that ...

Company intends to grow its market share in the global solar energy market with the release of this new IGBT SEOUL, South Korea, June 17, 2022 /PRNewswire/ -- Magnachip Semiconductor Corporation ...

Magnachip Semiconductor has developed a 1,200-V, 75-A insulated gate bipolar transistor (IGBT) in a TO-247PLUS package for applications that depend on strict power ratings and high efficiency. Meeting ...

SEOUL, South Korea--(BUSINESS WIRE)-- Magnachip Semiconductor Corporation (MX) (“Magnachip” or the “Company”) today announced it has concluded an agreement with Hyundai Mobis Company Limited ...

As environmental impacts from climate change are becoming more severe, the use of renewable energy like solar power continues to expand globally to reduce carbon emissions. Omdia, a market research ...