Scientists in the US fabricate the first gallium arsenide LED emitting at 1.5 microns. "Our result is important because it combines two very desirable properties: compatibility with fiber-optics at ...
Future high-speed communications devices will require efficient long-wavelength emitters that are compatible with integrated circuits. The development of a 1.5 μm GaAs LED is an important step forward ...
Back in 1960 Electronics Weekly was born into a ferment of III-V semiconductor research that within two years would produce the first practical LED. In 1960 Dr Nick Holonyak of General Electric was ...
A team of researchers led by the UK’s University of Cambridge has developed an adhesive-free method of bonding ultra-thin gallium arsenide (GaAs) solar cells to borosilicate glass. The technique, ...
DALLAS, June 16, 2010 /PRNewswire/ — (Due to the length of these URLs, it may be necessary to copy and pastethe hyperlinks into your Internet browser's URL address field. Remove any spaces.) In 2011, ...
Designed for ATE and industrial-control applications, the PS7200K and PS7200H miniature solid-state relays feature a GaAs LED on the input side and a pair of MOSFETs on the output side. Optimized for ...
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