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WEBUK Government buys compound semi fab. £11.5M support for UK semiconductor scale-ups. Meta reveals LEDos-based AR glasses prototype. Report highlights opportunities for UK companies. Battle for 8-inch SiC heats up. Soitec and Resonac sign SmartSiC agreement. US-India fab pact targets compound semis. …
CS Mantech: Strengthening the credentials of the III-V transistor
WEBMay 30, 2022 · One of the leading III-V foundries that is working on a portfolio of sub-terahertz transistors is WIN Semiconductors of Taiwan. According to Cheng-Kuo Lin, who spoke on behalf of the company at CS Mantech, new device designs are needed to reach this frequency domain. That’s because the company’s established technologies – the …
Progressing the photonic-crystal surface-emitting lasers
WEBMonday 15th August 2022. Thanks to a number of advances, photonic-crystal surface-emitting lasers (PCSELs) now combine a high output power with great beam quality, polarization, beam-pattern control and on-chip two-dimensional beam scanning. BY SUSUMU NODA FROM KYOTO UNIVERSITY. Semiconductor lasers continue to make important contributions to ...
A Coherent plan for SiC - News - Compound Semiconductor
WEBOct 18, 2023 · Through the licensing of General Electric’s SiC MOSFET technology, Coherent has been qualifying 1200 V and 1700 V devices that meet the Automotive Electronics Council AEC-Q101 standard. “If you look at the power market, they guarantee 175 degrees C,” says Khan. “We guarantee 200 degrees C operation. Our devices are very rugged and go ...
Welcome to - News, features and analysis.
WEBThe magazine and its associated website deliver comprehensive coverage of the compound semiconductor industry, from the business of making LEDs, amplifiers, lasers and power chips to development of a vast array of new devices. Compound Semiconductor magazine is also distributed at various industry events throughout the year.
GaN Systems releases ADS models for RF power - News
WEBJun 1, 2022 · GaN Systems has released GaN transistor ADS models to facilitate customer ease-of-use in RF power markets traditionally dominated by expensive silicon LDMOS and other RF power technologies. By replacing these existing devices power semiconductors at frequencies (typically 13-81 MHz), GaN Systems says …
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Hunan Sanan opens China's First Vertically Integrated SiC Line
WEBHunan Sanan Semiconductor, located in Changsha High-tech Industrial Park, has held its official inauguration to start production of China's first vertically integrated SiC line. The company has invested 16B RMB ($2.5B) in the site which covers an area of around 667 thousand m. Since its groundbreaking start in July 2020, it has taken under a ...
The allure of cubic SiC - News - Compound Semiconductor
WEBThe allure of cubic SiC. Wednesday 12th October 2022. The exceptional electronic and mechanical properties of the cubic form of SiC are enabling this polytype to take rapid strides towards serving in medical devices, MEMS and power electronic applications. BY FRANCESCO LA VIA FROM THE INSTITUTE FOR MICROELECTRONICS AND MICROSYSTEMS.
P-n junction empowers GaN HEMTs - News - Compound …
WEBThursday 3rd March 2022. Adding a p-n junction to the GaN HEMT boosts its breakdown voltage. One of the most significant weaknesses of the commercial GaN HEMT is that its gate voltage tends to be limited to no more than about 7 V to ensure safe operation. This restriction reduces the choice of gate drivers and rules out the use of silicon-based ...